Shutter-Synchronized Molecular Beam Epitaxy for Wafer-Scale Homogeneous GaAs and Telecom Wavelength Quantum Emitter Growth

Quantum dot (QD)-based single-photon emitter devices today are based on self-assembled random position nucleated QDs emitting at random wavelengths. Deterministic QD growth in position and emitter wavelength would be highly appreciated for industry-scale high-yield device manufacturing from wafers. Local droplet etching during molecular beam epitaxy is an all in situ method that allows excellent density control and predetermines the nucleation site of quantum dots. This method can produce strain-free GaAs QDs with excellent photonic and spin properties. Here, we focus on the emitter wavelength homogeneity. By wafer rotation-synchronized shutter opening time and adapted growth parameters, we grow QDs with a narrow peak emission wavelength homogeneity with no more than 1.2 nm shifts on a 45 mm diameter area and a narrow inhomogeneous ensemble broadening of only 2 nm at 4 K. The emission wavelength of these strain-free GaAs QDs is <800 nm, attractive for quantum optics experiments and quantum memory applications. We can use a similar random local droplet nucleation, nanohole drilling, and now, InAs infilling to produce QDs emitting in the telecommunication optical fiber transparency window around 1.3 µm, the so-called O-band. For this approach, we demonstrate good wavelength homogeneity and excellent density homogeneity beyond the possibilities of standard Stranski–Krastanov self-assembly. We discuss our methodology, structural and optical properties, and limitations set by our current setup capabilities.